Insight into physics-based RRAM models – review

Insight into physics-based RRAM models – review

This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that exist in the models is performed. Two different...

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Bibliographic Details
Main Authors: Arya Lekshmi Jagath, Chee Hock Leong, T. Nandha Kumar, HaiderA.F. Almurib
Format: Article
Language:English
Published: Wiley 2019-05-01
Series:The Journal of Engineering
Subjects:
resistive RAM
electrical resistivity
electrical conductivity transitions
integrated circuit modelling
oxidation
reduction (chemical)
physics-based RRAM models
compact models
oxide-based RRAM devices
electrical parameters
thermal parameters
drift diffusion
redox
electric field
conductive filament
current conduction mechanisms
resistive switching
filament radius
generalised hopping mechanisms
Schottky hopping mechanisms
conductive filament geometry
3D models
2D models
resistive switching behaviour
Online Access:https://digital-library.theiet.org/content/journals/10.1049/joe.2018.5234

Internet

https://digital-library.theiet.org/content/journals/10.1049/joe.2018.5234

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