Materials Design on the Origin of Gap States in a High-κ/GaAs Interface

Materials Design on the Origin of Gap States in a High-κ/GaAs Interface

Given the demand for constantly scaling microelectronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf(Zr)O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric c...

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Bibliographic Details
Main Authors: Weichao Wang, Cheng Gong, Ka Xiong, K.C. Santosh, Robert M. Wallace, Kyeongjae Cho
Format: Article
Language:English
Published: Elsevier 2015-09-01
Series:Engineering
Subjects:
high-mobility device
high-κ/III-V interface
interfacial gap states
first-principle calculations
Online Access:http://www.sciencedirect.com/science/article/pii/S2095809916300157

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