Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

Abstract We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions...

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Main Authors: Hochan Chang, Do Hoon Lee, Hyun Soo Kim, Jonghyurk Park, Byung Yang Lee
Format: Article
Language:English
Published: SpringerOpen 2018-12-01
Series:Nanoscale Research Letters
Subjects:
Zinc oxide nanowires
Self-assembly
Heat treatment
Photodetectors
Online Access:http://link.springer.com/article/10.1186/s11671-018-2774-0
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spelling doaj-839e3586e31a40c3ae9327638d674ae12020-11-25T00:26:51ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-12-011311910.1186/s11671-018-2774-0Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detectionHochan Chang0Do Hoon Lee1Hyun Soo Kim2Jonghyurk Park3Byung Yang Lee4Department of Mechanical Engineering, Korea UniversityDepartment of Mechanical Engineering, Korea UniversityDepartment of Mechanical Engineering, Korea UniversityElectronics and Telecommunications Research InstituteDepartment of Mechanical Engineering, Korea UniversityAbstract We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage V ds, showing maximum photoresponsivity at V ds = 7 V.http://link.springer.com/article/10.1186/s11671-018-2774-0Zinc oxide nanowiresSelf-assemblyHeat treatmentPhotodetectors
collection DOAJ
language English
format Article
sources DOAJ
author Hochan Chang
Do Hoon Lee
Hyun Soo Kim
Jonghyurk Park
Byung Yang Lee
spellingShingle Hochan Chang
Do Hoon Lee
Hyun Soo Kim
Jonghyurk Park
Byung Yang Lee
Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection
Nanoscale Research Letters
Zinc oxide nanowires
Self-assembly
Heat treatment
Photodetectors
author_facet Hochan Chang
Do Hoon Lee
Hyun Soo Kim
Jonghyurk Park
Byung Yang Lee
author_sort Hochan Chang
title Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection
title_short Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection
title_full Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection
title_fullStr Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection
title_full_unstemmed Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection
title_sort facile fabrication of self-assembled zno nanowire network channels and its gate-controlled uv detection
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2018-12-01
description Abstract We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage V ds, showing maximum photoresponsivity at V ds = 7 V.
topic Zinc oxide nanowires
Self-assembly
Heat treatment
Photodetectors
url http://link.springer.com/article/10.1186/s11671-018-2774-0
work_keys_str_mv AT hochanchang facilefabricationofselfassembledznonanowirenetworkchannelsanditsgatecontrolleduvdetection
AT dohoonlee facilefabricationofselfassembledznonanowirenetworkchannelsanditsgatecontrolleduvdetection
AT hyunsookim facilefabricationofselfassembledznonanowirenetworkchannelsanditsgatecontrolleduvdetection
AT jonghyurkpark facilefabricationofselfassembledznonanowirenetworkchannelsanditsgatecontrolleduvdetection
AT byungyanglee facilefabricationofselfassembledznonanowirenetworkchannelsanditsgatecontrolleduvdetection
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