Reversible oxygen-induced p-doping of mixed-cation halide perovskites

To fully unlock the potential of metal halide perovskites (MHPs) for use in optoelectronic devices, a comprehensive understanding of their electronic properties is in strong demand but presently lacking. This photoelectron spectroscopy study reveals that the thin films of three important mixed-catio...

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Main Authors: Dongguen Shin, Fengshuo Zu, Norbert Koch
Format: Article
Language:English
Published: AIP Publishing LLC 2021-08-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0056346
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spelling doaj-83944ef3d76145be85a6caee42d627242021-09-03T11:21:06ZengAIP Publishing LLCAPL Materials2166-532X2021-08-0198081104081104-710.1063/5.0056346Reversible oxygen-induced p-doping of mixed-cation halide perovskitesDongguen Shin0Fengshuo Zu1Norbert Koch2Institut für Physik & IRIS Adelershof, Humboldt-Universität zu Berlin, 12489 Berlin, GermanyInstitut für Physik & IRIS Adelershof, Humboldt-Universität zu Berlin, 12489 Berlin, GermanyInstitut für Physik & IRIS Adelershof, Humboldt-Universität zu Berlin, 12489 Berlin, GermanyTo fully unlock the potential of metal halide perovskites (MHPs) for use in optoelectronic devices, a comprehensive understanding of their electronic properties is in strong demand but presently lacking. This photoelectron spectroscopy study reveals that the thin films of three important mixed-cation/mixed-halide MHPs behave like intrinsic semiconductors with a very low defect concentration. The Fermi level position in the bandgap can be varied by almost 1 eV by choosing substrates of appropriate work function for samples that were handled under inert conditions. Upon oxygen exposure, two organic/inorganic-cation MHPs become strongly p-doped due to oxygen diffusion into the bulk, a process that is fully reversible when storing the samples in ultrahigh vacuum. In contrast, all-inorganic CsPbI1.8Br1.2 exhibits no electronic property changes upon oxygen exposure. Nonetheless, oxygen is found to effectively remove (light-induced) lead-related surface states of CsPbI1.8Br1.2.http://dx.doi.org/10.1063/5.0056346
collection DOAJ
language English
format Article
sources DOAJ
author Dongguen Shin
Fengshuo Zu
Norbert Koch
spellingShingle Dongguen Shin
Fengshuo Zu
Norbert Koch
Reversible oxygen-induced p-doping of mixed-cation halide perovskites
APL Materials
author_facet Dongguen Shin
Fengshuo Zu
Norbert Koch
author_sort Dongguen Shin
title Reversible oxygen-induced p-doping of mixed-cation halide perovskites
title_short Reversible oxygen-induced p-doping of mixed-cation halide perovskites
title_full Reversible oxygen-induced p-doping of mixed-cation halide perovskites
title_fullStr Reversible oxygen-induced p-doping of mixed-cation halide perovskites
title_full_unstemmed Reversible oxygen-induced p-doping of mixed-cation halide perovskites
title_sort reversible oxygen-induced p-doping of mixed-cation halide perovskites
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2021-08-01
description To fully unlock the potential of metal halide perovskites (MHPs) for use in optoelectronic devices, a comprehensive understanding of their electronic properties is in strong demand but presently lacking. This photoelectron spectroscopy study reveals that the thin films of three important mixed-cation/mixed-halide MHPs behave like intrinsic semiconductors with a very low defect concentration. The Fermi level position in the bandgap can be varied by almost 1 eV by choosing substrates of appropriate work function for samples that were handled under inert conditions. Upon oxygen exposure, two organic/inorganic-cation MHPs become strongly p-doped due to oxygen diffusion into the bulk, a process that is fully reversible when storing the samples in ultrahigh vacuum. In contrast, all-inorganic CsPbI1.8Br1.2 exhibits no electronic property changes upon oxygen exposure. Nonetheless, oxygen is found to effectively remove (light-induced) lead-related surface states of CsPbI1.8Br1.2.
url http://dx.doi.org/10.1063/5.0056346
work_keys_str_mv AT dongguenshin reversibleoxygeninducedpdopingofmixedcationhalideperovskites
AT fengshuozu reversibleoxygeninducedpdopingofmixedcationhalideperovskites
AT norbertkoch reversibleoxygeninducedpdopingofmixedcationhalideperovskites
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