Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance

Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance

the interface states have a very significant role in the components containing MOS structures. In this paper we study the interface states densities effect at SiO2/ N-polysilicon and SiO2/ P- monosilicon surfaces on metal/polysilicon /oxide/ monosilicon capacitance. The numerical solution of poisson...

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Bibliographic Details
Main Authors: H. Dib, Z. Benamara, Z. Kari
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2014-05-01
Series:Sensors & Transducers
Subjects:
MSPOS structure
Interface states densities.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_492.pdf

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