Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance
the interface states have a very significant role in the components containing MOS structures. In this paper we study the interface states densities effect at SiO2/ N-polysilicon and SiO2/ P- monosilicon surfaces on metal/polysilicon /oxide/ monosilicon capacitance. The numerical solution of poisson...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IFSA Publishing, S.L.
2014-05-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_492.pdf |
| Summary: | the interface states have a very significant role in the components containing MOS structures. In this paper we study the interface states densities effect at SiO2/ N-polysilicon and SiO2/ P- monosilicon surfaces on metal/polysilicon /oxide/ monosilicon capacitance. The numerical solution of poisson's equation and the determination of the charge variation in the structure induced by application of external bias (Vg) allow simulating the capacitance-voltage MSPOS characteristics. The results show that the interface states at SiO2/ polysilicon and SiO2/ monosilicon surfaces translate the CT (V) curve about positive voltage and cause the increase of the minimum value of capacitance. The effect of interface states on C (V) curves is neglected for the polysilicon doping concentration in order to 1019 cm-3. For this doping level, the C (V) curves are identical to the C (V) of the monocristalline MOS structure.
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| ISSN: | 2306-8515 1726-5479 |