CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and opera...
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2008-04-01
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Online Access: | http://www.mdpi.com/1424-8220/8/4/2662/ |
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doaj-82c5f714bd614e44884814acbf3316972020-11-24T23:58:14ZengMDPI AGSensors1424-82202008-04-018426622672CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing MaterialsShaestagir ChowdhuryJi Gong LeeSung Pil LeeAn integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.http://www.mdpi.com/1424-8220/8/4/2662/Integrated sensorsHumidityCMOSCarbon nitride film |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Shaestagir Chowdhury Ji Gong Lee Sung Pil Lee |
spellingShingle |
Shaestagir Chowdhury Ji Gong Lee Sung Pil Lee CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials Sensors Integrated sensors Humidity CMOS Carbon nitride film |
author_facet |
Shaestagir Chowdhury Ji Gong Lee Sung Pil Lee |
author_sort |
Shaestagir Chowdhury |
title |
CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials |
title_short |
CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials |
title_full |
CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials |
title_fullStr |
CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials |
title_full_unstemmed |
CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials |
title_sort |
cmos humidity sensor system using carbon nitride film as sensing materials |
publisher |
MDPI AG |
series |
Sensors |
issn |
1424-8220 |
publishDate |
2008-04-01 |
description |
An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH. |
topic |
Integrated sensors Humidity CMOS Carbon nitride film |
url |
http://www.mdpi.com/1424-8220/8/4/2662/ |
work_keys_str_mv |
AT shaestagirchowdhury cmoshumiditysensorsystemusingcarbonnitridefilmassensingmaterials AT jigonglee cmoshumiditysensorsystemusingcarbonnitridefilmassensingmaterials AT sungpillee cmoshumiditysensorsystemusingcarbonnitridefilmassensingmaterials |
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1725450936167432192 |