CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and opera...

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Main Authors: Shaestagir Chowdhury, Ji Gong Lee, Sung Pil Lee
Format: Article
Language:English
Published: MDPI AG 2008-04-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/8/4/2662/
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spelling doaj-82c5f714bd614e44884814acbf3316972020-11-24T23:58:14ZengMDPI AGSensors1424-82202008-04-018426622672CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing MaterialsShaestagir ChowdhuryJi Gong LeeSung Pil LeeAn integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.http://www.mdpi.com/1424-8220/8/4/2662/Integrated sensorsHumidityCMOSCarbon nitride film
collection DOAJ
language English
format Article
sources DOAJ
author Shaestagir Chowdhury
Ji Gong Lee
Sung Pil Lee
spellingShingle Shaestagir Chowdhury
Ji Gong Lee
Sung Pil Lee
CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
Sensors
Integrated sensors
Humidity
CMOS
Carbon nitride film
author_facet Shaestagir Chowdhury
Ji Gong Lee
Sung Pil Lee
author_sort Shaestagir Chowdhury
title CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
title_short CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
title_full CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
title_fullStr CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
title_full_unstemmed CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
title_sort cmos humidity sensor system using carbon nitride film as sensing materials
publisher MDPI AG
series Sensors
issn 1424-8220
publishDate 2008-04-01
description An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.
topic Integrated sensors
Humidity
CMOS
Carbon nitride film
url http://www.mdpi.com/1424-8220/8/4/2662/
work_keys_str_mv AT shaestagirchowdhury cmoshumiditysensorsystemusingcarbonnitridefilmassensingmaterials
AT jigonglee cmoshumiditysensorsystemusingcarbonnitridefilmassensingmaterials
AT sungpillee cmoshumiditysensorsystemusingcarbonnitridefilmassensingmaterials
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