Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum

Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films...

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Main Authors:	A. S. Kazakov, A. V. Galeeva, A. I. Artamkin, A. V. Ikonnikov, L. I. Ryabova, S. A. Dvoretsky, N. N. Mikhailov, M. I. Bannikov, S. N. Danilov, D. R. Khokhlov
Format:	Article
Language:	English
Published:	Nature Publishing Group 2021-06-01
Series:	Scientific Reports
Online Access:	https://doi.org/10.1038/s41598-021-91141-2

id	doaj-82a6e98253ee48408b0179fd04729b2a
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spelling	doaj-82a6e98253ee48408b0179fd04729b2a2021-06-06T11:34:24ZengNature Publishing GroupScientific Reports2045-23222021-06-011111710.1038/s41598-021-91141-2Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuumA. S. Kazakov0A. V. Galeeva1A. I. Artamkin2A. V. Ikonnikov3L. I. Ryabova4S. A. Dvoretsky5N. N. Mikhailov6M. I. Bannikov7S. N. Danilov8D. R. Khokhlov9Physics Department, M.V. Lomonosov Moscow State UniversityPhysics Department, M.V. Lomonosov Moscow State UniversityPhysics Department, M.V. Lomonosov Moscow State UniversityPhysics Department, M.V. Lomonosov Moscow State UniversityChemistry Department, M.V. Lomonosov Moscow State UniversityA.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch of RASA.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch of RASP.N. Lebedev Physical Institute of RASFaculty of Physics, University of RegensburgPhysics Department, M.V. Lomonosov Moscow State UniversityAbstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.https://doi.org/10.1038/s41598-021-91141-2
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	A. S. Kazakov A. V. Galeeva A. I. Artamkin A. V. Ikonnikov L. I. Ryabova S. A. Dvoretsky N. N. Mikhailov M. I. Bannikov S. N. Danilov D. R. Khokhlov
spellingShingle	A. S. Kazakov A. V. Galeeva A. I. Artamkin A. V. Ikonnikov L. I. Ryabova S. A. Dvoretsky N. N. Mikhailov M. I. Bannikov S. N. Danilov D. R. Khokhlov Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum Scientific Reports
author_facet	A. S. Kazakov A. V. Galeeva A. I. Artamkin A. V. Ikonnikov L. I. Ryabova S. A. Dvoretsky N. N. Mikhailov M. I. Bannikov S. N. Danilov D. R. Khokhlov
author_sort	A. S. Kazakov
title	Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_short	Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_full	Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_fullStr	Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_full_unstemmed	Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
title_sort	distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
publisher	Nature Publishing Group
series	Scientific Reports
issn	2045-2322
publishDate	2021-06-01
description	Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
url	https://doi.org/10.1038/s41598-021-91141-2
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Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum

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