Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm wh...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4769102 |