KPFM surface photovoltage measurement and numerical simulation
A method for the analysis of Kelvin probe force microscopy (KPFM) characterization of semiconductor devices is presented. It enables evaluation of the influence of defective surface layers. The model is validated by analysing experimental KPFM measurements on crystalline silicon samples of contact p...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2019-01-01
|
| Series: | EPJ Photovoltaics |
| Subjects: | |
| Online Access: | https://www.epj-pv.org/articles/epjpv/full_html/2019/01/pv180014/pv180014.html |