KPFM surface photovoltage measurement and numerical simulation

KPFM surface photovoltage measurement and numerical simulation

A method for the analysis of Kelvin probe force microscopy (KPFM) characterization of semiconductor devices is presented. It enables evaluation of the influence of defective surface layers. The model is validated by analysing experimental KPFM measurements on crystalline silicon samples of contact p...

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Bibliographic Details
Main Authors: Marchat Clément, Connolly James P., Kleider Jean-Paul, Alvarez José, Koduvelikulathu Lejo J., Puel Jean Baptiste
Format: Article
Language:English
Published: EDP Sciences 2019-01-01
Series:EPJ Photovoltaics
Subjects:
kpfm
spv
surface defects
modeling and band bending
Online Access:https://www.epj-pv.org/articles/epjpv/full_html/2019/01/pv180014/pv180014.html

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https://www.epj-pv.org/articles/epjpv/full_html/2019/01/pv180014/pv180014.html

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