Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio

Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio

We successfully fabricate the Si<sub>0.8</sub>Ge<sub>0.2</sub> channel fin field-effect-transistor (FinFET) with 5 nm ultra-thin fin width and high aspect ratio (~10&#x00D7;) on silicon-on-insulator (SOI) substrate by simple two-step dry etching. In comparison of the conv...

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Bibliographic Details
Main Authors: Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
FinFET
SiGe
high mobility
ultra-thin fin
short channel effect
Online Access:https://ieeexplore.ieee.org/document/9197642/

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