Damping constant measurement and inverse giant magnetoresistance in spintronic devices with Fe4N

Fe4N is one of the attractive materials for spintronic devices due to its large spin asymmetric conductance and negative spin polarization at the Fermi level. We have successfully deposited Fe4N thin film with (001) out-of-plane orientation using a DC facing-target-sputtering system. A Fe(001)/Ag(00...

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Bibliographic Details
Main Authors: Xuan Li, Hongshi Li, Mahdi Jamali, Jian-Ping Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2017-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4994972