Electron structure of topologically disordered metals

• Main Author: P.Yakibchuk
• Format: Article
• Language: English
• Published: Institute for Condensed Matter Physics 2005-01-01
• Series: Condensed Matter Physics
• Subjects: density of states; mass operator; form factor; structure factor; pseudo-gap
• Online Access: http://dx.doi.org/10.5488/CMP.8.3.537

Here two methods for calculating the density of states of electrons in conduction band of disordered metals are investigated. The first one is based on the usage of one-parameter trial electron wave function. The equation for density of states gotten within this method is more general as compared to the results of perturbation theory. Electron-ion interaction is applied in the form of electron-ion structure factor, which makes it possible to use this method for a series of systems where potential form factor is not a small value and the perturbation theory fails. It also gives us well-known results of Relel-Schrodinger and Brilliuen-Vigner perturbation theory in case of small potential. Basically, the second approach is a common perturbation theory for pseudo-potential and Green's function method. It considers the contributions up to the third order. The results of computation for density of states in some non-transition metals are presented. The deviation of density of states causing the appearance of pseudo-gap is clearly recognized.