Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

In this work, cluster tool (CT) Plasma Assisted Molecular Beam Epitaxy (PA-MBE) grown AlGaN/GaN heterostructure on c-plane (0 0 0 1) sapphire (Al2O3) were investigated by High Resolution X-ray Diffraction (HRXRD), Room Temperature Raman Spectroscopy (RTRS), and Room Temperature Photolum...

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Bibliographic Details
Main Authors:	Mihir Kumar Mahata, Saptarsi Ghosh, Sanjay Kumar Jana, Apurba Chakraborty, Ankush Bag, Partha Mukhopadhyay, Rahul Kumar, Dhrubes Biswas
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2014-11-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4902090

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