GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification
GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistance, the reverse leakage current, and the reverse br...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6874492/ |