IMPROVING BANDWIDTH OF FLIPPED VOLTAGE FOLLOWER USING GATE-BODY DRIVEN TECHNIQUE
In this paper, a new approach to enhance the bandwidth of flipped voltage follower is explored. The proposed approach is based on gate-body driven technique. This technique boosts the transconductance in a MOS transistor as both gate and body/bulk terminals are tied together and used as signal input...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Taylor's University
2017-01-01
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Series: | Journal of Engineering Science and Technology |
Subjects: | |
Online Access: | http://jestec.taylors.edu.my/Vol%2012%20issue%201%20January%202017/12_1_7.pdf |