An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level Compensation
This paper presents a method for preventing output level distortion while matching the channel impedance in the single-ended PAM-4 transmitter for memory interfaces. ZQ codes for all four output signal levels were obtained through ZQ calibration and saved in the ZQ code table. The ZQ code generator...
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doaj-80095262d50b489bb26f62051b0037e62021-08-06T15:21:04ZengMDPI AGElectronics2079-92922021-07-01101768176810.3390/electronics10151768An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level CompensationChangho Hyun0Yong-Un Jeong1Suhwan Kim2Joo-Hyung Chae3Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaDepartment of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaDepartment of Electrical and Computer Engineering, Seoul National University, Seoul 08826, KoreaDepartment of Electronics and Communications Engineering, Kwangwoon University, Seoul 01897, KoreaThis paper presents a method for preventing output level distortion while matching the channel impedance in the single-ended PAM-4 transmitter for memory interfaces. ZQ codes for all four output signal levels were obtained through ZQ calibration and saved in the ZQ code table. The ZQ code generator then adaptively selected the appropriate codes depending on the data pattern and delivered them to the output driver; this can improve the level separation mismatch ratio (RLM) while matching the channel impedance. To validate the effectiveness of our approach, a prototype chip with an active area of 0.035 mm<sup>2</sup> was fabricated in a 65 nm CMOS process. It achieved the energy efficiency of 3.09 pJ/bit/pin at 18 Gb/s/pin, and its RLM was 0.971 while matching the channel impedance.https://www.mdpi.com/2079-9292/10/15/1768single-ended signalingtransmitterfour-level pulse amplitude modulation (PAM-4)impedance matchinglevel separation mismatch ratio (RLM)memory interface |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Changho Hyun Yong-Un Jeong Suhwan Kim Joo-Hyung Chae |
spellingShingle |
Changho Hyun Yong-Un Jeong Suhwan Kim Joo-Hyung Chae An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level Compensation Electronics single-ended signaling transmitter four-level pulse amplitude modulation (PAM-4) impedance matching level separation mismatch ratio (RLM) memory interface |
author_facet |
Changho Hyun Yong-Un Jeong Suhwan Kim Joo-Hyung Chae |
author_sort |
Changho Hyun |
title |
An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level Compensation |
title_short |
An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level Compensation |
title_full |
An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level Compensation |
title_fullStr |
An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level Compensation |
title_full_unstemmed |
An 18-Gb/s/pin Single-Ended PAM-4 Transmitter for Memory Interfaces with Adaptive Impedance Matching and Output Level Compensation |
title_sort |
18-gb/s/pin single-ended pam-4 transmitter for memory interfaces with adaptive impedance matching and output level compensation |
publisher |
MDPI AG |
series |
Electronics |
issn |
2079-9292 |
publishDate |
2021-07-01 |
description |
This paper presents a method for preventing output level distortion while matching the channel impedance in the single-ended PAM-4 transmitter for memory interfaces. ZQ codes for all four output signal levels were obtained through ZQ calibration and saved in the ZQ code table. The ZQ code generator then adaptively selected the appropriate codes depending on the data pattern and delivered them to the output driver; this can improve the level separation mismatch ratio (RLM) while matching the channel impedance. To validate the effectiveness of our approach, a prototype chip with an active area of 0.035 mm<sup>2</sup> was fabricated in a 65 nm CMOS process. It achieved the energy efficiency of 3.09 pJ/bit/pin at 18 Gb/s/pin, and its RLM was 0.971 while matching the channel impedance. |
topic |
single-ended signaling transmitter four-level pulse amplitude modulation (PAM-4) impedance matching level separation mismatch ratio (RLM) memory interface |
url |
https://www.mdpi.com/2079-9292/10/15/1768 |
work_keys_str_mv |
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