Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

<p>Abstract</p> <p>We investigate ordered nucleation of Ge islands on pit-patterned Si(001) using an original hybrid Kinetic Monte Carlo model. The method allows us to explore long time-scale evolution while using large simulation cells. We analyze the possibility to achieve select...

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Bibliographic Details
Main Authors: Bergamaschini R, Montalenti F, Miglio L
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Stranski-Krastanow growth
Ge
Si
Patterning
Kinetic Monte Carlo
Online Access:http://dx.doi.org/10.1007/s11671-010-9723-x

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