Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
The present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with th...
Main Authors: | Bilel Chouchen, Mohamed Hichem Gazzah, Abdullah Bajahzar, Hafedh Belmabrouk |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-04-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5092236 |
Similar Items
-
Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells
by: Bilel Chouchen, et al.
Published: (2019-04-01) -
Analysis of the InGaN ∕ GaN LED With an InGaN ∕ GaN pre-buffer layer
by: Po-Yi Hou, et al.
Published: (2008) -
Simulation and Analysis of InGaN/GaN Solar Cells
by: 陳哲男
Published: (2011) -
GaN Based Solar Cell and Light Emitting Diode with Hybrid AlGaN/InGaN and GaN/InGaN Multiple Quantum Wells
by: Bing-HungHsieh, et al.
Published: (2015) -
Investigations of the luminescence of GaN and InGaN/GaN quantum wells
by: PecharromaÌn-Gallego, RauÌl
Published: (2004)