Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects

The present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with th...

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Main Authors: Bilel Chouchen, Mohamed Hichem Gazzah, Abdullah Bajahzar, Hafedh Belmabrouk
Format: Article
Language:English
Published: AIP Publishing LLC 2019-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5092236
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spelling doaj-7f25508b9132449b9b0b421b842e5a042020-11-25T03:04:38ZengAIP Publishing LLCAIP Advances2158-32262019-04-0194045313045313-910.1063/1.5092236067904ADVNumerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effectsBilel Chouchen0Mohamed Hichem Gazzah1Abdullah Bajahzar2Hafedh Belmabrouk3Quantum and Statistical Physics Laboratory, Faculty of Sciences of Monastir, University of Monastir, Monastir 5019, TunisiaQuantum and Statistical Physics Laboratory, Faculty of Sciences of Monastir, University of Monastir, Monastir 5019, TunisiaDepartment of Computer Science and Information, College of Science, Majmaah University, Zulfi 11932, Saudi ArabiaElectronics and Microelectronics Laboratory, Faculty of Science of Monastir, University of Monastir, Monastir 5019, TunisiaThe present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with the photovoltaic parameters taking into consideration the spontaneous and piezoelectric polarizations. A new efficient numerical model based on the difference finite method is well suited to theoretical and experimental data. The results reveal that the hydrostatic pressure has a beneficial effect on the behavior of cells on the N-face configuration, whereas the elevated temperature has a destructive impact on these devices.http://dx.doi.org/10.1063/1.5092236
collection DOAJ
language English
format Article
sources DOAJ
author Bilel Chouchen
Mohamed Hichem Gazzah
Abdullah Bajahzar
Hafedh Belmabrouk
spellingShingle Bilel Chouchen
Mohamed Hichem Gazzah
Abdullah Bajahzar
Hafedh Belmabrouk
Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
AIP Advances
author_facet Bilel Chouchen
Mohamed Hichem Gazzah
Abdullah Bajahzar
Hafedh Belmabrouk
author_sort Bilel Chouchen
title Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
title_short Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
title_full Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
title_fullStr Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
title_full_unstemmed Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects
title_sort numerical modeling of ingan/gan p-i-n solar cells under temperature and hydrostatic pressure effects
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-04-01
description The present paper deals with the modeling of the simultaneous impact of temperature and applied hydrostatic pressure on the electronic characteristics and electrical parameters in In0.2Ga0.8N/GaN p-i-n solar cells. The energy conduction band is calculated with a self-consistent model coupled with the photovoltaic parameters taking into consideration the spontaneous and piezoelectric polarizations. A new efficient numerical model based on the difference finite method is well suited to theoretical and experimental data. The results reveal that the hydrostatic pressure has a beneficial effect on the behavior of cells on the N-face configuration, whereas the elevated temperature has a destructive impact on these devices.
url http://dx.doi.org/10.1063/1.5092236
work_keys_str_mv AT bilelchouchen numericalmodelingofinganganpinsolarcellsundertemperatureandhydrostaticpressureeffects
AT mohamedhichemgazzah numericalmodelingofinganganpinsolarcellsundertemperatureandhydrostaticpressureeffects
AT abdullahbajahzar numericalmodelingofinganganpinsolarcellsundertemperatureandhydrostaticpressureeffects
AT hafedhbelmabrouk numericalmodelingofinganganpinsolarcellsundertemperatureandhydrostaticpressureeffects
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