Heat dissipation study of graphene-based film in single tube IGBT devices
The insulated gate bipolar transistor (IGBT) devices often work under significantly high voltage and current, and how to reduce loss within them and prevent damage to them, caused by excessive heating must be considered in their operation. In this paper, a three-dimensional model of a single-tube IG...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5078448 |