Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Nitrogen-doped ZnO thin films were grown on a-plane Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from...

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Main Authors: Xingyou Chen, Zhenzhong Zhang, Yunyan Zhang, Bin Yao, Binghui Li, Qian Gong
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Crystals
Subjects:
molecular beam epitaxy
ZnO
dopant
defects
Online Access:https://www.mdpi.com/2073-4352/9/4/204
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spelling doaj-7ee07ca2faf845a6bc6a4246fe8f52ae2020-11-24T21:20:56ZengMDPI AGCrystals2073-43522019-04-019420410.3390/cryst9040204cryst9040204Passivation Mechanism of Nitrogen in ZnO under Different Oxygen AmbienceXingyou Chen0Zhenzhong Zhang1Yunyan Zhang2Bin Yao3Binghui Li4Qian Gong5State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaDepartment of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UKState Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023, ChinaState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaNitrogen-doped ZnO thin films were grown on a-plane Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.https://www.mdpi.com/2073-4352/9/4/204molecular beam epitaxyZnOdopantdefects
collection DOAJ
language English
format Article
sources DOAJ
author Xingyou Chen
Zhenzhong Zhang
Yunyan Zhang
Bin Yao
Binghui Li
Qian Gong
spellingShingle Xingyou Chen
Zhenzhong Zhang
Yunyan Zhang
Bin Yao
Binghui Li
Qian Gong
Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
Crystals
molecular beam epitaxy
ZnO
dopant
defects
author_facet Xingyou Chen
Zhenzhong Zhang
Yunyan Zhang
Bin Yao
Binghui Li
Qian Gong
author_sort Xingyou Chen
title Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
title_short Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
title_full Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
title_fullStr Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
title_full_unstemmed Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
title_sort passivation mechanism of nitrogen in zno under different oxygen ambience
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2019-04-01
description Nitrogen-doped ZnO thin films were grown on a-plane Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.
topic molecular beam epitaxy
ZnO
dopant
defects
url https://www.mdpi.com/2073-4352/9/4/204
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AT zhenzhongzhang passivationmechanismofnitrogeninznounderdifferentoxygenambience
AT yunyanzhang passivationmechanismofnitrogeninznounderdifferentoxygenambience
AT binyao passivationmechanismofnitrogeninznounderdifferentoxygenambience
AT binghuili passivationmechanismofnitrogeninznounderdifferentoxygenambience
AT qiangong passivationmechanismofnitrogeninznounderdifferentoxygenambience
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