Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods

Thermal emitters with properties of wavelength-selective and narrowband have been highly sought after for a variety of potential applications due to their high energy efficiency in the mid-infrared spectral range. In this study, we theoretically and experimentally demonstrate the tunable narrowband...

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Main Authors: Guozhi Hou, Qingyuan Wang, Yu Zhu, Zhangbo Lu, Jun Xu, Kunji Chen
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/7/1814
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spelling doaj-7eb00bbc0dae4dc98c824a774a4aa9f22021-07-23T13:57:46ZengMDPI AGNanomaterials2079-49912021-07-01111814181410.3390/nano11071814Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free MethodsGuozhi Hou0Qingyuan Wang1Yu Zhu2Zhangbo Lu3Jun Xu4Kunji Chen5National Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, ChinaThermal emitters with properties of wavelength-selective and narrowband have been highly sought after for a variety of potential applications due to their high energy efficiency in the mid-infrared spectral range. In this study, we theoretically and experimentally demonstrate the tunable narrowband thermal emitter based on fully planar Si-W-SiN/SiNO multilayer, which is realized by the excitation of Tamm plasmon polaritons between a W layer and a SiN/SiNO-distributed Bragg reflector. In conjunction with electromagnetic simulations by the FDTD method, the optimum structure design of the emitter is implemented by 2.5 periods of DBR structure, and the corresponding emitter exhibits the nearly perfect narrowband absorption performance at the resonance wavelength and suppressed absorption performance in long wave range. Additionally, the narrowband absorption peak is insensitive to polarization mode and has a considerable angular tolerance of incident light. Furthermore, the actual high-quality Si-W-SiN/SiNO emitters are fabricated through lithography-free methods including magnetron sputtering and PECVD technology. The experimental absorption spectra of optimized emitters are found to be in good agreement with the simulated absorption spectra, showing the tunable narrowband absorption with all peak values of over 95%. Remarkably, the fabricated Si-W-SiN/SiNO emitter presents excellent high-temperature stability for several heating/cooling cycles confirmed up to 1200 K in Ar ambient. This easy-to-fabricate and tunable narrowband refractory emitter paves the way for practical designs in various photonic and thermal applications, such as thermophotovoltaic and IR radiative heaters.https://www.mdpi.com/2079-4991/11/7/1814narrowband thermal emitterTamm plasmon polaritonswavelength selectivelithography-freethermal stability
collection DOAJ
language English
format Article
sources DOAJ
author Guozhi Hou
Qingyuan Wang
Yu Zhu
Zhangbo Lu
Jun Xu
Kunji Chen
spellingShingle Guozhi Hou
Qingyuan Wang
Yu Zhu
Zhangbo Lu
Jun Xu
Kunji Chen
Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods
Nanomaterials
narrowband thermal emitter
Tamm plasmon polaritons
wavelength selective
lithography-free
thermal stability
author_facet Guozhi Hou
Qingyuan Wang
Yu Zhu
Zhangbo Lu
Jun Xu
Kunji Chen
author_sort Guozhi Hou
title Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods
title_short Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods
title_full Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods
title_fullStr Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods
title_full_unstemmed Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods
title_sort tunable narrowband silicon-based thermal emitter with excellent high-temperature stability fabricated by lithography-free methods
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2021-07-01
description Thermal emitters with properties of wavelength-selective and narrowband have been highly sought after for a variety of potential applications due to their high energy efficiency in the mid-infrared spectral range. In this study, we theoretically and experimentally demonstrate the tunable narrowband thermal emitter based on fully planar Si-W-SiN/SiNO multilayer, which is realized by the excitation of Tamm plasmon polaritons between a W layer and a SiN/SiNO-distributed Bragg reflector. In conjunction with electromagnetic simulations by the FDTD method, the optimum structure design of the emitter is implemented by 2.5 periods of DBR structure, and the corresponding emitter exhibits the nearly perfect narrowband absorption performance at the resonance wavelength and suppressed absorption performance in long wave range. Additionally, the narrowband absorption peak is insensitive to polarization mode and has a considerable angular tolerance of incident light. Furthermore, the actual high-quality Si-W-SiN/SiNO emitters are fabricated through lithography-free methods including magnetron sputtering and PECVD technology. The experimental absorption spectra of optimized emitters are found to be in good agreement with the simulated absorption spectra, showing the tunable narrowband absorption with all peak values of over 95%. Remarkably, the fabricated Si-W-SiN/SiNO emitter presents excellent high-temperature stability for several heating/cooling cycles confirmed up to 1200 K in Ar ambient. This easy-to-fabricate and tunable narrowband refractory emitter paves the way for practical designs in various photonic and thermal applications, such as thermophotovoltaic and IR radiative heaters.
topic narrowband thermal emitter
Tamm plasmon polaritons
wavelength selective
lithography-free
thermal stability
url https://www.mdpi.com/2079-4991/11/7/1814
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