Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects rela...

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Bibliographic Details
Main Authors: Alexana Roshko, Matt Brubaker, Paul Blanchard, Todd Harvey, Kris A. Bertness
Format: Article
Language:English
Published: MDPI AG 2018-09-01
Series:Crystals
Subjects:
gallium nitride
selective area growth
polarity
defects
PAMBE
TEM
Online Access:http://www.mdpi.com/2073-4352/8/9/366
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spelling doaj-7e13201d95264f88b79e974a6b2d1c2f2020-11-24T21:47:17ZengMDPI AGCrystals2073-43522018-09-018936610.3390/cryst8090366cryst8090366Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) SubstratesAlexana Roshko0Matt Brubaker1Paul Blanchard2Todd Harvey3Kris A. Bertness4National Institute of Standards and Technology (NIST), Boulder, CO 80305, USANational Institute of Standards and Technology (NIST), Boulder, CO 80305, USANational Institute of Standards and Technology (NIST), Boulder, CO 80305, USANational Institute of Standards and Technology (NIST), Boulder, CO 80305, USANational Institute of Standards and Technology (NIST), Boulder, CO 80305, USASelective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.http://www.mdpi.com/2073-4352/8/9/366gallium nitrideselective area growthpolaritydefectsPAMBETEM
collection DOAJ
language English
format Article
sources DOAJ
author Alexana Roshko
Matt Brubaker
Paul Blanchard
Todd Harvey
Kris A. Bertness
spellingShingle Alexana Roshko
Matt Brubaker
Paul Blanchard
Todd Harvey
Kris A. Bertness
Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
Crystals
gallium nitride
selective area growth
polarity
defects
PAMBE
TEM
author_facet Alexana Roshko
Matt Brubaker
Paul Blanchard
Todd Harvey
Kris A. Bertness
author_sort Alexana Roshko
title Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
title_short Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
title_full Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
title_fullStr Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
title_full_unstemmed Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
title_sort selective area growth and structural characterization of gan nanostructures on si(111) substrates
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2018-09-01
description Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.
topic gallium nitride
selective area growth
polarity
defects
PAMBE
TEM
url http://www.mdpi.com/2073-4352/8/9/366
work_keys_str_mv AT alexanaroshko selectiveareagrowthandstructuralcharacterizationofgannanostructuresonsi111substrates
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AT toddharvey selectiveareagrowthandstructuralcharacterizationofgannanostructuresonsi111substrates
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