Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module
Widespread use of semiconductor radiation sources in optoelectronic devices for various purposes requires further study of the mechanisms of formation of photometric characteristics of the integrated device in the near illumination zone, where the law of inverted squares is violated. A mathematical...
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EDP Sciences
2021-01-01
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doaj-7de4559b306c48409692d00e044156582021-07-07T11:34:23ZengEDP SciencesE3S Web of Conferences2267-12422021-01-012800501010.1051/e3sconf/202128005010e3sconf_icsf2021_05010Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode moduleYakovliev Ruslan0Shmelov Yurii1Petchenko Maryna2Honchar Serhii3Kovalskyi Vasyl4Kharkiv National University of Internal Affairs, Kremenchuk flight collegeKharkiv National University of Internal Affairs, Kremenchuk flight collegeKharkiv National University of Internal Affairs, Kremenchuk flight collegeKharkiv National University of Internal Affairs, Kremenchuk flight collegeKharkiv National University of Internal Affairs, Kremenchuk flight collegeWidespread use of semiconductor radiation sources in optoelectronic devices for various purposes requires further study of the mechanisms of formation of photometric characteristics of the integrated device in the near illumination zone, where the law of inverted squares is violated. A mathematical model of the multicomponent beam-diode module is proposed. On its basis the analysis of influence of the parameters of separate beam sources on the deformation of the indicatrix of radiant intensity at transition from the far zone to the near one is carried out. It is shown that the determining parameter of the indicatrix change in longitude and polar distance is the distribution in the plane of the modulus of the product of the radiant intensity of a single diode on its polar radius vector. The displacement of the polar angle of the maximum of the vector of the diode radiant intensity is more significant for wide radiation patterns than for concentrated ones. For specific parameters of diodes and geometry of their location the suitability of the proposed model for a priori modeling of beam-diode modules is illustrated.https://www.e3s-conferences.org/articles/e3sconf/pdf/2021/56/e3sconf_icsf2021_05010.pdf |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yakovliev Ruslan Shmelov Yurii Petchenko Maryna Honchar Serhii Kovalskyi Vasyl |
spellingShingle |
Yakovliev Ruslan Shmelov Yurii Petchenko Maryna Honchar Serhii Kovalskyi Vasyl Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module E3S Web of Conferences |
author_facet |
Yakovliev Ruslan Shmelov Yurii Petchenko Maryna Honchar Serhii Kovalskyi Vasyl |
author_sort |
Yakovliev Ruslan |
title |
Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module |
title_short |
Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module |
title_full |
Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module |
title_fullStr |
Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module |
title_full_unstemmed |
Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module |
title_sort |
research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module |
publisher |
EDP Sciences |
series |
E3S Web of Conferences |
issn |
2267-1242 |
publishDate |
2021-01-01 |
description |
Widespread use of semiconductor radiation sources in optoelectronic devices for various purposes requires further study of the mechanisms of formation of photometric characteristics of the integrated device in the near illumination zone, where the law of inverted squares is violated. A mathematical model of the multicomponent beam-diode module is proposed. On its basis the analysis of influence of the parameters of separate beam sources on the deformation of the indicatrix of radiant intensity at transition from the far zone to the near one is carried out. It is shown that the determining parameter of the indicatrix change in longitude and polar distance is the distribution in the plane of the modulus of the product of the radiant intensity of a single diode on its polar radius vector. The displacement of the polar angle of the maximum of the vector of the diode radiant intensity is more significant for wide radiation patterns than for concentrated ones. For specific parameters of diodes and geometry of their location the suitability of the proposed model for a priori modeling of beam-diode modules is illustrated. |
url |
https://www.e3s-conferences.org/articles/e3sconf/pdf/2021/56/e3sconf_icsf2021_05010.pdf |
work_keys_str_mv |
AT yakovlievruslan researchofthesynthesisofradiantintensityindicatrixofmulticomponentbeamdiodemodule AT shmelovyurii researchofthesynthesisofradiantintensityindicatrixofmulticomponentbeamdiodemodule AT petchenkomaryna researchofthesynthesisofradiantintensityindicatrixofmulticomponentbeamdiodemodule AT honcharserhii researchofthesynthesisofradiantintensityindicatrixofmulticomponentbeamdiodemodule AT kovalskyivasyl researchofthesynthesisofradiantintensityindicatrixofmulticomponentbeamdiodemodule |
_version_ |
1721315916187172864 |