Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
The optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQ...
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doaj-7ccf8fb3377e4da7aba9f3aae0d615a72020-11-25T00:22:20ZengAIP Publishing LLCAIP Advances2158-32262013-07-013707212107212110.1063/1.4816716Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodesJunjie KangZhi LiHongjian LiZhiqiang LiuPing MaXiaoyan YiGuohong WangThe optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQE), turn on voltage and light output power (LOP) of these structures by numerical simulation. It found that QW width has a remarkable influence on the properties of RP blue InGaN LEDs. With the increase of QW width, the turn on voltage and radiation recombination rate decreases. It finds that the optimal width of QWs is about 3 nm at the current injection density of 15 A/cm2.http://link.aip.org/link/doi/10.1063/1.4816716 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Junjie Kang Zhi Li Hongjian Li Zhiqiang Liu Ping Ma Xiaoyan Yi Guohong Wang |
spellingShingle |
Junjie Kang Zhi Li Hongjian Li Zhiqiang Liu Ping Ma Xiaoyan Yi Guohong Wang Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes AIP Advances |
author_facet |
Junjie Kang Zhi Li Hongjian Li Zhiqiang Liu Ping Ma Xiaoyan Yi Guohong Wang |
author_sort |
Junjie Kang |
title |
Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes |
title_short |
Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes |
title_full |
Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes |
title_fullStr |
Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes |
title_full_unstemmed |
Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes |
title_sort |
optimal width of quantum well for reversed polarization blue ingan light-emitting diodes |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2013-07-01 |
description |
The optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQE), turn on voltage and light output power (LOP) of these structures by numerical simulation. It found that QW width has a remarkable influence on the properties of RP blue InGaN LEDs. With the increase of QW width, the turn on voltage and radiation recombination rate decreases. It finds that the optimal width of QWs is about 3 nm at the current injection density of 15 A/cm2. |
url |
http://link.aip.org/link/doi/10.1063/1.4816716 |
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