Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes

The optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQ...

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Main Authors: Junjie Kang, Zhi Li, Hongjian Li, Zhiqiang Liu, Ping Ma, Xiaoyan Yi, Guohong Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2013-07-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4816716
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spelling doaj-7ccf8fb3377e4da7aba9f3aae0d615a72020-11-25T00:22:20ZengAIP Publishing LLCAIP Advances2158-32262013-07-013707212107212110.1063/1.4816716Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodesJunjie KangZhi LiHongjian LiZhiqiang LiuPing MaXiaoyan YiGuohong WangThe optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQE), turn on voltage and light output power (LOP) of these structures by numerical simulation. It found that QW width has a remarkable influence on the properties of RP blue InGaN LEDs. With the increase of QW width, the turn on voltage and radiation recombination rate decreases. It finds that the optimal width of QWs is about 3 nm at the current injection density of 15 A/cm2.http://link.aip.org/link/doi/10.1063/1.4816716
collection DOAJ
language English
format Article
sources DOAJ
author Junjie Kang
Zhi Li
Hongjian Li
Zhiqiang Liu
Ping Ma
Xiaoyan Yi
Guohong Wang
spellingShingle Junjie Kang
Zhi Li
Hongjian Li
Zhiqiang Liu
Ping Ma
Xiaoyan Yi
Guohong Wang
Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
AIP Advances
author_facet Junjie Kang
Zhi Li
Hongjian Li
Zhiqiang Liu
Ping Ma
Xiaoyan Yi
Guohong Wang
author_sort Junjie Kang
title Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
title_short Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
title_full Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
title_fullStr Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
title_full_unstemmed Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes
title_sort optimal width of quantum well for reversed polarization blue ingan light-emitting diodes
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2013-07-01
description The optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQE), turn on voltage and light output power (LOP) of these structures by numerical simulation. It found that QW width has a remarkable influence on the properties of RP blue InGaN LEDs. With the increase of QW width, the turn on voltage and radiation recombination rate decreases. It finds that the optimal width of QWs is about 3 nm at the current injection density of 15 A/cm2.
url http://link.aip.org/link/doi/10.1063/1.4816716
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