Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes

• Main Authors: Junjie Kang, Zhi Li, Hongjian Li, Zhiqiang Liu, Ping Ma, Xiaoyan Yi, Guohong Wang
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2013-07-01
• Series: AIP Advances
• Online Access: http://link.aip.org/link/doi/10.1063/1.4816716
• ISSN: 2158-3226

The optical properties of reversed polarization (RP) blue InGaN light-emitting diodes (LEDs) under different quantum wells (QWs) width are numerically studied. We compared the band diagram, electron and hole concentration, emission wavelength, radiation recombination, internal quantum efficiency (IQE), turn on voltage and light output power (LOP) of these structures by numerical simulation. It found that QW width has a remarkable influence on the properties of RP blue InGaN LEDs. With the increase of QW width, the turn on voltage and radiation recombination rate decreases. It finds that the optimal width of QWs is about 3 nm at the current injection density of 15 A/cm2.