Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs

• Main Authors: Dong-Ru Hsieh, Kun-Cheng Lin, Tien-Sheng Chao
• Format: Article
• Language: English
• Published: IEEE 2019-01-01
• Series: IEEE Journal of the Electron Devices Society
• Subjects: 3-D integrated circuits (ICs); reverse boron penetration; nitrous oxide (N₂O); Pi-gate (PG); poly-Si; junctionless accumulation mode (JAM)
• Online Access: https://ieeexplore.ieee.org/document/8630465/

In this paper, the influence of nitrous oxide (N₂O) nitridation temperatures on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) TFTs is experimentally investigated. The tetraethoxysilane (TEOS) gate oxide quality for PG JAM TFTs can be significantly improved by increasing N₂O nitridation temperatures (TN) from 700°C to 800°C in N2O ambient, resulting in the improvement of average subthreshold swing (A.S.S.), increase of on current (ION), and enhancement of TEOS gate oxide breakdown E-field (EOBD). PG JAM TFTs by means of a proper channel doping concentration (N_ch = 5 × 1018 cm^-3) and a suitable T_N (800°C) exhibit a steep A.S.S. ~96 mV/dec. and a large E_OBD~12.1 MV/cm.