ANALYTICAL SOLUTION OF EQUATIONS SET DESCRIBING DIFFUSION OF POINT DEFECTS IN THE 2-LAYER SEMICONDUCTOR STRUCTURE

The boundary-value problem on impurity and point defect diffusion in the 2-layer semiconductor structure was formulated and analyzed. The analytical solution of the set of equations describing diffusion of intrinsic point defects was obtained for the case of the constant coefficients of these equati...

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Bibliographic Details
Main Authors: O. I. Velichko, V. V. Aksenov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/913