Optic Properties on AgGaSe2 Polycristal Fabrication
Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the fo...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Universitas Indonesia
2010-10-01
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| Series: | Makara Journal of Technology |
| Subjects: | |
| Online Access: | http://journal.ui.ac.id/technology/journal/article/view/85 |
| Summary: | Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, c = 8,8854 Å, and c/a = 2,01426.<br> |
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| ISSN: | 2355-2786 2356-4539 |