Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles study
The electronic, optoelectronic, and thermoelectric properties of a ternary structure MgSrSe2 are investigated using density functional theory. MgSrSe2 is found to be a direct bandgap semiconductor with a bandgap of 2.04 eV. The photon energy calculated results show that the absorption spectra are in...
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doaj-7a74b16f6e4b441a967b928495502da42020-11-25T03:29:29ZengAIP Publishing LLCAIP Advances2158-32262020-04-01104045010045010-710.1063/5.0002946Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles studyQian Wang0Ziyu Hu1Xiaohong Shao2College of Science, Beijing University of Chemical Technology, Beijing 100029, ChinaCollege of Science, Beijing University of Chemical Technology, Beijing 100029, ChinaCollege of Science, Beijing University of Chemical Technology, Beijing 100029, ChinaThe electronic, optoelectronic, and thermoelectric properties of a ternary structure MgSrSe2 are investigated using density functional theory. MgSrSe2 is found to be a direct bandgap semiconductor with a bandgap of 2.04 eV. The photon energy calculated results show that the absorption spectra are in UV-A light, and MgSrSe2 could be applied for a photodetector. Optoelectronic properties, such as the dielectric function, absorption coefficient, reflectivity, refractive index, extinction coefficient, and energy-loss of MgSrSe2, are systematically discussed. The effective mass of the band edge curvature analysis indicates that the p-type MgSrSe2 is suitable for the thermoelectric material, and the maximum dimensionless figure of merit value can be up to 1.33 at 800 K. The results show that MgSrSe2 is a potential optoelectronic and thermoelectric material, and encourage further experimental works for its synthesis.http://dx.doi.org/10.1063/5.0002946 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Qian Wang Ziyu Hu Xiaohong Shao |
spellingShingle |
Qian Wang Ziyu Hu Xiaohong Shao Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles study AIP Advances |
author_facet |
Qian Wang Ziyu Hu Xiaohong Shao |
author_sort |
Qian Wang |
title |
Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles study |
title_short |
Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles study |
title_full |
Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles study |
title_fullStr |
Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles study |
title_full_unstemmed |
Exploring electronic, optoelectronic, and thermoelectric properties of ternary compound MgSrSe2 from first-principles study |
title_sort |
exploring electronic, optoelectronic, and thermoelectric properties of ternary compound mgsrse2 from first-principles study |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2020-04-01 |
description |
The electronic, optoelectronic, and thermoelectric properties of a ternary structure MgSrSe2 are investigated using density functional theory. MgSrSe2 is found to be a direct bandgap semiconductor with a bandgap of 2.04 eV. The photon energy calculated results show that the absorption spectra are in UV-A light, and MgSrSe2 could be applied for a photodetector. Optoelectronic properties, such as the dielectric function, absorption coefficient, reflectivity, refractive index, extinction coefficient, and energy-loss of MgSrSe2, are systematically discussed. The effective mass of the band edge curvature analysis indicates that the p-type MgSrSe2 is suitable for the thermoelectric material, and the maximum dimensionless figure of merit value can be up to 1.33 at 800 K. The results show that MgSrSe2 is a potential optoelectronic and thermoelectric material, and encourage further experimental works for its synthesis. |
url |
http://dx.doi.org/10.1063/5.0002946 |
work_keys_str_mv |
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