Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time

Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time

Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion...

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Main Authors: Jiseong Jang, Sangyeob Lee, Choong-Heui Chung
Format: Article
Language:English
Published: Elsevier 2019-12-01
Series:Data in Brief
Online Access:http://www.sciencedirect.com/science/article/pii/S2352340919310236
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spelling doaj-79aceecf53bf4dfab3733dad6ce76c4e2020-11-25T01:20:06ZengElsevierData in Brief2352-34092019-12-0127Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure timeJiseong Jang0Sangyeob Lee1Choong-Heui Chung2Department of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of KoreaDepartment of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of KoreaDepartment of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea; Corresponding author. Department of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of iLP, the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the iLP values to properly estimate the electrical quality of CIGS thin films. Keywords: Lateral photocurrent, Minority carrier diffusion length, Back-surface recombination velocity, Solar cells, CIGShttp://www.sciencedirect.com/science/article/pii/S2352340919310236
collection DOAJ
language English
format Article
sources DOAJ
author Jiseong Jang
Sangyeob Lee
Choong-Heui Chung
spellingShingle Jiseong Jang
Sangyeob Lee
Choong-Heui Chung
Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
Data in Brief
author_facet Jiseong Jang
Sangyeob Lee
Choong-Heui Chung
author_sort Jiseong Jang
title Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
title_short Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
title_full Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
title_fullStr Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
title_full_unstemmed Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
title_sort data on lateral photocurrent along a cu(in,ga)se2 thin film as a function of air exposure time
publisher Elsevier
series Data in Brief
issn 2352-3409
publishDate 2019-12-01
description Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of iLP, the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the iLP values to properly estimate the electrical quality of CIGS thin films. Keywords: Lateral photocurrent, Minority carrier diffusion length, Back-surface recombination velocity, Solar cells, CIGS
url http://www.sciencedirect.com/science/article/pii/S2352340919310236
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AT sangyeoblee dataonlateralphotocurrentalongacuingase2thinfilmasafunctionofairexposuretime
AT choongheuichung dataonlateralphotocurrentalongacuingase2thinfilmasafunctionofairexposuretime
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