| Summary: | Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of iLP, the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the iLP values to properly estimate the electrical quality of CIGS thin films. Keywords: Lateral photocurrent, Minority carrier diffusion length, Back-surface recombination velocity, Solar cells, CIGS
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