Forming of 4НSiC p–i–n-diodes mesastructures by the ion-plasmous etching method

Forming of 4НSiC p–i–n-diodes mesastructures by the ion-plasmous etching method

The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperature range.

Bibliographic Details
Main Authors: Boltovets M. S., Borisenko A. G., Ivanov V. N., Fedorovich О. А., Krivutsa V. A., Polozov B. P.
Format: Article
Language:English
Published: Politehperiodika 2009-10-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
p–i–n-diode
4NSiC silicon carbide
ion-plasma etching
silicon etching
mesastructure
diode chip
Online Access:http://www.tkea.com.ua/tkea/2009/5_2009/pdf/13.zip

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