Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

<p>Abstract</p> <p>MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transit...

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Bibliographic Details
Main Authors: Pan Guoqiang, Xu Pengfa, Lu Jun, Chen Lin, Yan Shuai, Meng Haijuan, Zhao Jianhua
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/125
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Summary:<p>Abstract</p> <p>MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature <it>T</it> <sub>t</sub>, at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated <it>T</it> <sub>t </sub>of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions.</p> <p>PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe</p>
ISSN:1931-7573
1556-276X