Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States

Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States

An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A. Parameter extraction is based on matching the experimental C-V data with numerical modeling results. The algorithm is used to e...

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Bibliographic Details
Main Authors: Ryazantsev D. V., Grudtsov V. P.
Format: Article
Language:English
Published: Sciendo 2016-10-01
Series:Measurement Science Review
Subjects:
c-v measurement
parameter extraction
interface states
quantum simulation
mos
Online Access:https://doi.org/10.1515/msr-2016-0033
Description
Summary:An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A. Parameter extraction is based on matching the experimental C-V data with numerical modeling results. The algorithm is used to extract the parameters of test MOS structures with ultrathin gate dielectrics. The applicability of the algorithm for the determination of distribution function of DOS and finding the donor defect level in silicon is shown.
ISSN:1335-8871

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