Influence of radiation defects on the electrophysical and detector properties of CdTe:Cl irradiated by neutrons
A promising material for semiconductor detectors of ionizing radiation is CdTe:Cl which allows obtaining detectors with high resistivity ρ and electron mobility μn. During operation, the detector materials may be exposed to neutron irradiation, which causes radiation defects to form in crystal latti...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2020-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://tkea.com.ua/journalarchive/2020_1-2/4.pdf |