Simulation Analysis in Sub-0.1 μm for Partial Isolation Field-Effect Transistors
In this paper, we extensively analyzed the drain-induced barrier lowering (DIBL) and leakage current characteristics of the proposed partial isolation field-effect transistor (PiFET) structure. We then compared the PiFET with the conventional planar metal-oxide semiconductor field-effect transistor...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-10-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-9292/7/10/227 |