Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

• Main Authors: P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2020-06-01
• Series: APL Materials
• Online Access: http://dx.doi.org/10.1063/1.5143217

Deposition of semiconductors on bendable substrates is a crucial step toward flexible circuitry and deposition by a roll-to-roll process. Since most bendable substrates have limited temperature stability (normally degradation starts between 150 °C and 300 °C), processing temperatures are typically below that of rigid substrates. Amorphous oxide semiconductors (AOSs) such as indium gallium zinc oxide (IGZO) can be fabricated at room temperature (RT) and exhibit electron mobilities >10 cm2 V−1 s−1 being a pre-requisite for application in backplanes of displays. While IGZO is already commercially exploited, the search for alternative materials is highly relevant because indium and gallium are rare and expensive. Zinc tin oxide (ZTO) is a promising AOS since zinc and tin are highly abundant and cheap. In this letter, we discuss RT-fabricated n-type ZTO thin films used as the channel material in flexible inverter circuits based on junction field-effect transistors. RT-fabricated nickel oxide is used as a semitransparent p-type gate material. The devices are fabricated on flexible polyimide and exhibit an excellent peak gain magnitude of 464 and uncertainty level as low as 130 mV at a supply voltage of only 3 V. They are characterized before and after bending at various radii. Even after bending at 2 mm radius, the inverters behave still very well.