Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State

Multi-Level Control of Resistive RAM (RRAM) Using a Write Termination to Achieve 4 Bits/Cell in High Resistance State

RRAM density enhancement is essential not only to gain market share in the highly competitive emerging memory sector but also to enable future high-capacity and power-efficient brain-inspired systems, beyond the capabilities of today’s hardware. In this paper, a novel design scheme is proposed to re...

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Bibliographic Details
Main Authors: Hassan Aziza, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, Patrick Girard, Arnaud Virazel, Karine Coulié
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Electronics
Subjects:
RRAM
OxRAM multi-level cell
MLC
QLC
write termination
variability
Online Access:https://www.mdpi.com/2079-9292/10/18/2222

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