Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films
For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2 films, including the thickness dependence of the lower critical field Hc1. MgB2 thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate eithe...
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AIP Publishing LLC
2015-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4916696 |
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doaj-7686d88ff5e847459156542e9823daf52020-11-25T00:32:15ZengAIP Publishing LLCAPL Materials2166-532X2015-04-0134041101041101-710.1063/1.4916696002504APMEnhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin filmsTeng Tan0M. A. Wolak1Narendra Acharya2Alex Krick3Andrew C. Lang4Jennifer Sloppy5Mitra L. Taheri6L. Civale7Ke Chen8X. X. Xi9Department of Physics, Temple University, Philadelphia, Pennsylvania 19122, USADepartment of Physics, Temple University, Philadelphia, Pennsylvania 19122, USADepartment of Physics, Temple University, Philadelphia, Pennsylvania 19122, USADepartment of Physics, Temple University, Philadelphia, Pennsylvania 19122, USADepartment of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USADepartment of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USADepartment of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USALos Alamos National Laboratory, Los Alamos, New Mexico 87545, USADepartment of Physics, Temple University, Philadelphia, Pennsylvania 19122, USADepartment of Physics, Temple University, Philadelphia, Pennsylvania 19122, USAFor potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2 films, including the thickness dependence of the lower critical field Hc1. MgB2 thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc1 at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB2/MgO multilayers to enhance the vortex penetration field.http://dx.doi.org/10.1063/1.4916696 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Teng Tan M. A. Wolak Narendra Acharya Alex Krick Andrew C. Lang Jennifer Sloppy Mitra L. Taheri L. Civale Ke Chen X. X. Xi |
| spellingShingle |
Teng Tan M. A. Wolak Narendra Acharya Alex Krick Andrew C. Lang Jennifer Sloppy Mitra L. Taheri L. Civale Ke Chen X. X. Xi Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films APL Materials |
| author_facet |
Teng Tan M. A. Wolak Narendra Acharya Alex Krick Andrew C. Lang Jennifer Sloppy Mitra L. Taheri L. Civale Ke Chen X. X. Xi |
| author_sort |
Teng Tan |
| title |
Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films |
| title_short |
Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films |
| title_full |
Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films |
| title_fullStr |
Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films |
| title_full_unstemmed |
Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films |
| title_sort |
enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline mgb2 thin films |
| publisher |
AIP Publishing LLC |
| series |
APL Materials |
| issn |
2166-532X |
| publishDate |
2015-04-01 |
| description |
For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2 films, including the thickness dependence of the lower critical field Hc1. MgB2 thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc1 at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB2/MgO multilayers to enhance the vortex penetration field. |
| url |
http://dx.doi.org/10.1063/1.4916696 |
| work_keys_str_mv |
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