Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs
In this paper, NBTI behaviors of Si pFinFETs are characterized with the measurement time down to ns-scale utilizing the fast V<sub>th</sub> measurement (FVM) technique. It is found that the NBTI behaviors in terms of V<sub>th</sub> shift is strongly influenced by the measurem...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9075153/ |