Bias-Modulated High Photoelectric Response of Graphene-Nanocrystallite Embedded Carbon Film Coated on n-Silicon

• Main Authors: Xi Zhang, Zezhou Lin, Da Peng, Dongfeng Diao
• Format: Article
• Language: English
• Published: MDPI AG 2019-03-01
• Series: Nanomaterials
• Subjects: graphene nanocrystallite; bias-modulated Fermi level; carbon film; photoelectric response; tunable spectral response
• Online Access: http://www.mdpi.com/2079-4991/9/3/327

We propose that bias-modulated graphene-nanocrystallites (GNs) grown vertically can enhance the photoelectric property of carbon film coated on n-Si substrate. In this work, GN-embedded carbon (GNEC) films were deposited by the electron cyclotron resonance (ECR) sputtering technique. Under a reverse diode bias which lifts the Dirac point of GNs to a higher value, the GNEC film/n-Si device achieved a high photocurrent responsivity of 0.35 A/W. The bias-modulated position of the Dirac point resulted in a tunable ON/OFF ratio and a variable spectral response peak. Moreover, due to the standing structured GNs keeping the transport channels, a response time of 2.2 μs was achieved. This work sheds light on the bias-control wavelength-sensitive photodetector applications.