Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces
Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the su...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4929332 |