Visible Blind 4H-SiC P <inline-formula> <tex-math notation="TeX">$^{+}$</tex-math></inline-formula>-N UV Photodiode Obtained by Al Implantation
This paper reports the electrooptical characteristics of ultraviolet light-sensitive 4H-SiC p<sup>+</sup>-n junction photodiodes obtained by aluminium (Al) ion implantation on low-doped n-type epilayers. A low dark current density (<; 1 nA/cm<sup>2</sup> at -100 V) was...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Photonics Journal |
| Online Access: | https://ieeexplore.ieee.org/document/7124585/ |
| Summary: | This paper reports the electrooptical characteristics of ultraviolet light-sensitive 4H-SiC p<sup>+</sup>-n junction photodiodes obtained by aluminium (Al) ion implantation on low-doped n-type epilayers. A low dark current density (<; 1 nA/cm<sup>2</sup> at -100 V) was measured on 1-mm<sup>2</sup> area devices up to 90 °C. A peak responsivity of 0.11 A/W at 280 nm corresponding to a quantum efficiency of about 50% and a visible blindness> 10<sup>3</sup> were demonstrated. The absence of optically active defects and nitrogen donor-aluminum acceptor pair recombination centers was monitored by optical measurements in the visible range. |
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| ISSN: | 1943-0655 |