Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate
The oxygen plasma surface treatment prior to ohmic metal deposition was developed to reduce the ohmic contact resistance (R<sub>C</sub>) for AlGaN/GaN high electron mobility transistors (HEMTs) on a high-resistive Si substrate. The oxygen plasma, which was produced by an inductively coup...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/7/855 |