THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION

THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION

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Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and...

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Main Authors: N.P. VASSEL, S.G. KUREN, S.S. VASSEL, I.V. PAVLOVA
Format: Article
Language:Russian
Published: Don State Technical University 2009-09-01
Series:Advanced Engineering Research
Subjects:
конденсированные фосфаты
неорганические полимеры
идентификация продуктов
диаграммы состояния
электропроводность
Online Access:https://www.vestnik-donstu.ru/jour/article/view/1168
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spelling doaj-7580a9651ef840108f5e688b77869c8b2021-10-02T17:08:00ZrusDon State Technical UniversityAdvanced Engineering Research2687-16532009-09-01934975031153THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTIONN.P. VASSEL0S.G. KUREN1S.S. VASSEL2I.V. PAVLOVA3Московский государственный университет технологий и управления (филиал в г. Ростове-на-Дону)Don State Technical University.Московский государственный университет технологий и управления (филиал в г. Ростове-на-Дону)Московский государственный университет технологий и управления (филиал в г. Ростове-на-Дону)Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and the properties semiconductor film at the base of gallium polyphosphate.https://www.vestnik-donstu.ru/jour/article/view/1168конденсированные фосфатынеорганические полимерыидентификация продуктовдиаграммы состоянияэлектропроводность
collection DOAJ
language Russian
format Article
sources DOAJ
author N.P. VASSEL
S.G. KUREN
S.S. VASSEL
I.V. PAVLOVA
spellingShingle N.P. VASSEL
S.G. KUREN
S.S. VASSEL
I.V. PAVLOVA
THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION
Advanced Engineering Research
конденсированные фосфаты
неорганические полимеры
идентификация продуктов
диаграммы состояния
электропроводность
author_facet N.P. VASSEL
S.G. KUREN
S.S. VASSEL
I.V. PAVLOVA
author_sort N.P. VASSEL
title THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION
title_short THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION
title_full THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION
title_fullStr THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION
title_full_unstemmed THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION
title_sort semiconductor film at the base of gallium polyphosphate, synthesized by the method of solid-phase reaction
publisher Don State Technical University
series Advanced Engineering Research
issn 2687-1653
publishDate 2009-09-01
description Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and the properties semiconductor film at the base of gallium polyphosphate.
topic конденсированные фосфаты
неорганические полимеры
идентификация продуктов
диаграммы состояния
электропроводность
url https://www.vestnik-donstu.ru/jour/article/view/1168
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