THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION

THE SEMICONDUCTOR FILM AT THE BASE OF GALLIUM POLYPHOSPHATE, SYNTHESIZED BY THE METHOD OF SOLID-PHASE REACTION

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Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and...

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Bibliographic Details
Main Authors: N.P. VASSEL, S.G. KUREN, S.S. VASSEL, I.V. PAVLOVA
Format: Article
Language:Russian
Published: Don State Technical University 2009-09-01
Series:Advanced Engineering Research
Subjects:
конденсированные фосфаты
неорганические полимеры
идентификация продуктов
диаграммы состояния
электропроводность
Online Access:https://www.vestnik-donstu.ru/jour/article/view/1168
Description
Summary:Gallium polyphosphate was synthesized using the method of solid-phase reaction between Ga(NO3)3 and NH4H2PO4. Some properties of gallium polyphosphate and compound on its basis, such as index of refraction, density, conduct- ivity were studied. New composition of semiconductor film is developed, and the properties semiconductor film at the base of gallium polyphosphate.
ISSN:2687-1653

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