Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect
This paper presents the design of an extremely miniaturized accelerometer based on the tunneling effect. Because of its high sensitivity the tunneling effect allows the detection of smallest deflections. The aim of the novel design is a large geometric miniaturization at the lowest possible natural...
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doaj-75426be8126742dda9f17824ac121f872020-11-24T20:53:34ZengMDPI AGProceedings2504-39002018-11-01213104510.3390/proceedings2131045proceedings2131045Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling EffectMichael Haub0Sebastian Hummel1Martin Bogner2Hermann Sandmaier3Chair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyChair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyChair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyChair Microsystems, University of Stuttgart, Pfaffenwaldring 4F, 70569 Stuttgart, GermanyThis paper presents the design of an extremely miniaturized accelerometer based on the tunneling effect. Because of its high sensitivity the tunneling effect allows the detection of smallest deflections. The aim of the novel design is a large geometric miniaturization at the lowest possible natural frequency with a nominal acceleration of +/−1 g corresponding to a deflection of +/−9.36 Å. The poly-silicon (PolySi) sensor structure with a size (L × W) of 98 µm × 85 µm is designed in a way that the main displacement operates just in one direction. To lead the sensor into operational conditions, control a constant distance between the tunneling electrodes and perform self-test actuations two electrodes are placed below the sensor structure. The tunneling tip is deposited by a focused ion beam (FIB) to provide the tunneling section with a third pad on the substrate. Within this paper the focus is on the functional implementation of the structure, the investigation of the electrostatic actuators and the deposition of the tunneling tip by the FIB.https://www.mdpi.com/2504-3900/2/13/1045accelerometertunneling effectmicrosensorselectrostaticfocused ion beam |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Michael Haub Sebastian Hummel Martin Bogner Hermann Sandmaier |
spellingShingle |
Michael Haub Sebastian Hummel Martin Bogner Hermann Sandmaier Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect Proceedings accelerometer tunneling effect microsensors electrostatic focused ion beam |
author_facet |
Michael Haub Sebastian Hummel Martin Bogner Hermann Sandmaier |
author_sort |
Michael Haub |
title |
Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect |
title_short |
Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect |
title_full |
Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect |
title_fullStr |
Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect |
title_full_unstemmed |
Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect |
title_sort |
novel design of an extremely miniaturized accelerometer based on quantum tunneling effect |
publisher |
MDPI AG |
series |
Proceedings |
issn |
2504-3900 |
publishDate |
2018-11-01 |
description |
This paper presents the design of an extremely miniaturized accelerometer based on the tunneling effect. Because of its high sensitivity the tunneling effect allows the detection of smallest deflections. The aim of the novel design is a large geometric miniaturization at the lowest possible natural frequency with a nominal acceleration of +/−1 g corresponding to a deflection of +/−9.36 Å. The poly-silicon (PolySi) sensor structure with a size (L × W) of 98 µm × 85 µm is designed in a way that the main displacement operates just in one direction. To lead the sensor into operational conditions, control a constant distance between the tunneling electrodes and perform self-test actuations two electrodes are placed below the sensor structure. The tunneling tip is deposited by a focused ion beam (FIB) to provide the tunneling section with a third pad on the substrate. Within this paper the focus is on the functional implementation of the structure, the investigation of the electrostatic actuators and the deposition of the tunneling tip by the FIB. |
topic |
accelerometer tunneling effect microsensors electrostatic focused ion beam |
url |
https://www.mdpi.com/2504-3900/2/13/1045 |
work_keys_str_mv |
AT michaelhaub noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect AT sebastianhummel noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect AT martinbogner noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect AT hermannsandmaier noveldesignofanextremelyminiaturizedaccelerometerbasedonquantumtunnelingeffect |
_version_ |
1716797033209135104 |